Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Optimization of Bistability in Nonlinear Chalcogenide Fiber Bragg Grating for All Optical Switch and Memory Applications

We solve the coupled mode equations governing the chalcogenide nonlinear fiber Bragg gratings (FBGs) numerically, and obtain the bistability characteristics. The characteristics of the chalcogenide nonlinear FBGs such as: switching threshold intensity, bistability interval and on-off switching ratio are studied. The effects of FBG length and its third order nonlinear refractive index on FBG cha...

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.

Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous an...

Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

superlattice-like structures for phase change random access memory Chun Chia Tan, Luping Shi, Rong Zhao, Qiang Guo, Yi Li, Yi Yang, Tow Chong Chong, Jonathan A. Malen, Wee-Liat Ong, Tuviah E. Schlesinger, and James A. Bain Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 Department of Electrical and Computer Engi...

Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications

Performance Optimization Strategies for Transactional Memory Applications

Transactional Memory (TM) has been proposed as an architectural extension to enable lock-free data structures. With the ubiquity of multi-core systems, the idea of TM gains new momentum. The motivation for the invention of TM was to simplify the synchronization of parallel threads in a shared memory system. TM features optimistic concurrency as opposed to the pessimistic concurrency with tradit...